Selective Laser Ablation in Resists and Block Copolymers for High Resolution Lithographic Patterning

Deirdre L. Olynick; Pradeep Perera; Adam Schwartzberg; Prashant Kulshreshta; Dimas G. De Oteyza; Nathan Jarnagin; Cliff Henderson; Zhiwei Sun; Ilja Gunkel; Thomas Russell; Matthias Budden; Ivo W. Rangelow

doi:10.2494/photopolymer.28.663

Deirdre L. Olynick, Pradeep Perera, Adam Schwartzberg, Prashant Kulshreshta, Dimas G. De Oteyza, Nathan Jarnagin, Cliff Henderson, Zhiwei Sun, Ilja Gunkel, Thomas Russell, Matthias Budden, Ivo W. Rangelow

Author information

Deirdre L. Olynick
Molecular Foundry, Lawrence Berkeley National Laboratory
Pradeep Perera
Molecular Foundry, Lawrence Berkeley National Laboratory
Adam Schwartzberg
Molecular Foundry, Lawrence Berkeley National Laboratory
Prashant Kulshreshta
Molecular Foundry, Lawrence Berkeley National Laboratory
Dimas G. De Oteyza
Molecular Foundry, Lawrence Berkeley National Laboratory
Nathan Jarnagin
School of Chemistry and Biochemistry and School of Chemical Engineering, Georgia Institute of Technology
Cliff Henderson
School of Chemistry and Biochemistry and School of Chemical Engineering, Georgia Institute of Technology
Zhiwei Sun
Molecular Foundry, Lawrence Berkeley National Laboratory
Department of Polymer Science and Engineering, University of Massachusetts Amherst
Ilja Gunkel
Molecular Foundry, Lawrence Berkeley National Laboratory
Department of Polymer Science and Engineering, University of Massachusetts Amherst
Thomas Russell
Molecular Foundry, Lawrence Berkeley National Laboratory
Department of Polymer Science and Engineering, University of Massachusetts Amherst
Matthias Budden
Department of Micro- and Nanoelectronic Systems (MNES), Ilmenau University of Technology
Ivo W. Rangelow
Department of Micro- and Nanoelectronic Systems (MNES), Ilmenau University of Technology

Keywords: block-copolymer, ablation, lithography

JOURNAL FREE ACCESS

2015 Volume 28 Issue 5 Pages 663-668

DOI https://doi.org/10.2494/photopolymer.28.663

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Abstract

Previously, we demonstrated an all dry, selective laser ablation development in methyl acetoxy calixarene (MAC6) which produced high resolution (15-25 nm half-pitch), high aspect ratio features not achievable with wet development. In this paper, we investigate the selective laser ablation process as a means to create a block copolymer derived lithographic pattern through the selective removal of one block. Two block copolymer systems were investigated PS-b-PHOST, and P2VP-b-PS-b-P2VP. The selective laser ablations process on block copolymers offers an alternative to plasma etching when plasma etching is not effective.

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