Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
Metal Containing Resist Readiness for HVM EUV Lithography
Danilo De SimoneMing MaoFrederic LazzarinoGeert Vandenberghe
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2016 Volume 29 Issue 3 Pages 501-507


The use of metals in extreme ultraviolet (EUV) lithography to have the highest productivity with low exposure dose requirements (below 20mJ/cm2) has recently developed an increased interest. The motivation of using metals in the formulation of EUV photoresists stems from the high EUV cross sectional absorption of several metal species that give the opportunity to enhance the EUV absorbance capacity compared to a traditional pure organic resist and thus capture more productive photons, improving the resist sensitivity. The challenge is to keep a high performing switching solubility mechanism, to maintain patterning fidelity and to mitigate shot noise with a better tradeoff between sensitivity and line width roughness (LWR) when compared to a traditional resist. Further, a possible introduction of a metal containing resist (MCR) in a high volume manufacturing (HVM) line opens new scenarios at the contamination and process level about the management of the wafers and tools and MCRs need to demonstrate high capacity to compete with traditional organic photo materials. In this work we have looked at two different aspects of MCRs: the electron response as initial fundamental study on the light-photoresist interaction and the patterning performance in EUVL as manufacturability aspect of such a class of metal photoresists. The obtained results give indication that adding a metal into a CAR formulation may not be sufficient to increase the electron response of such a resist when exposed under the EUV light. Further, an MCR does not necessarily give good EUV lithographic performance, suggesting that the benefit from metals in terms of higher electron response or higher photon absorption can be fully realized only if the chemistry is right. On another hand, when the right chemistry is realized, we demonstrate that the litho-etch integration in a module is feasible for an MCR. In this paper the pattern transfer on stacked wafer for 22nm line-space dense features is successfully demonstrated using an MCR high imaging performance. Furthermore, the cross contamination results on an etch chamber tool are successfully presented. With the demonstrated etch capability, the metal containing resists move a step forward reducing the gap between the R&D and the manufacturing stage.

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© 2016 The Society of Photopolymer Science and Technology (SPST)
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