Improvement in Transfer Performance for Antireflection Structured Films with Antifouling Properties via Partial-filling Technique

Abstract

Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For ARS films applied on touch-panel devices such as mobile phones and tablet computers, however, it is necessary to protect them from fingerprints and dust. Therefore, a UV-curable epoxy resin has been developed with antifouling properties for use with UV-NIL. However, because the developed epoxy resin possesses a high adhesive strength that ultimately reduces the lifetime of nanopatterned molds such as those for ARS, the ARS films herein were fabricated by a partial filling technique. The technique of partial filling uses an incomplete filling ratio of resin, and the work herein specifies the lower and higher filling pressures used for the repetitive transfer test. As a result, up to 200 ARS film imprints were successfully fabricated that exhibited excellent performance using lower pressure filling UV-NIL; while the reflectance obtained was less than 0.5%. In addition, the fabricated ARS films were evaluated for their antifouling properties and their transfer durability performance using the wipe test and the repeated transfer test, respectively.