Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Synthesis and Property of Tellurium-Containing Molecular Resist Materials for Extreme Ultraviolet Lithography System
Hiroto KudoMari FukunagaTeppei YamadaShinji YamakawaTakeo WatanabeHiroki YamamotoKazumasa OkamotoTakahiro Kozawa
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2020 年 32 巻 6 号 p. 805-810

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We examined the synthesis and resist properties of tellurium-containing molecular resist materials. By the condensation reaction of anisol, phenol, and 2-phenylphenol with tellurium tetrachloride (TeCl4), dichloro di(4-hydroxyphenyl) telluride (CHPT), dichloro di(4-hydroxy-3-phenylbenz) telluride (CHBT), di(4-hydroxyphenyl) telluride (HPT), and di(4-hydoxy-3-phenylbenz) telluride (HBT) were synthesized. These were reacted with 2-methyl-2-adamantyl bromo acetate, yielding corresponding compounds CHPT-AD, CHBT-AD, HPT-AD, and HBT-AD, respectively. By the examination of resist properties (thickness loss property, resist sensitivity, and etching durability), CHBT-AD could be good candidate for higher resolution EUV resist material.

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© 2019 The Society of Photopolymer Science and Technology (SPST)
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