2020 年 32 巻 6 号 p. 805-810
We examined the synthesis and resist properties of tellurium-containing molecular resist materials. By the condensation reaction of anisol, phenol, and 2-phenylphenol with tellurium tetrachloride (TeCl4), dichloro di(4-hydroxyphenyl) telluride (CHPT), dichloro di(4-hydroxy-3-phenylbenz) telluride (CHBT), di(4-hydroxyphenyl) telluride (HPT), and di(4-hydoxy-3-phenylbenz) telluride (HBT) were synthesized. These were reacted with 2-methyl-2-adamantyl bromo acetate, yielding corresponding compounds CHPT-AD, CHBT-AD, HPT-AD, and HBT-AD, respectively. By the examination of resist properties (thickness loss property, resist sensitivity, and etching durability), CHBT-AD could be good candidate for higher resolution EUV resist material.