Photoresist for Water-developable Photolithography Process Using Plant-derived Hemicellulose

Abstract

In this study, water-developable photoresist materials capable of fine patterning were developed by imparting photosensitive groups to a molecule made from hemicellulose arabinoxylan extracted from corn bran, which were fabricated by UV exposure at 365 nm and 45 J/cm². The surface topography of the photoresist pattern developed with water was observed to be approximately 0.46 µm. The etching resistance was improved in the photoresist material made from hemicellulose arabinoxylan compared with other water-soluble polymers. The development of water-developable photoresist materials derived from hemicellulose is expected to reduce environmental impact. In addition to the electronics field, where photoresist materials have been used in the past, applications in the medical field and biosystems are also expected since the material is derived from biomass.