Chemically Amplified Si-containing Resist for Bilayer Resist Pricess

Abstract

A new positive-type chemically amplified Si-contained resist, which consist of polysilsesquioxane and methacrylate copolymer has been developed for ArF excimer laser lithography. The resist which was developed in 2.38% TMAH(tetramethylammonium hydroxide) has a high sensitivity(5mJ/cm2), good O2-etching resistance (selectivity>10) and showed excellent resolution. When examined in the bi-layer resist process(BLR), well-defined sub 160nm patterns were obtained.