IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance

P. Rao Varanasi; A. M. Mewherter; M. C. Lawson; G. Jordhamo; R. Allen; J. Opitz; H. Ito; T. Wallow; D. Hofer

doi:10.2494/photopolymer.12.493

P. Rao Varanasi, A. M. Mewherter, M. C. Lawson, G. Jordhamo, R. Allen, J. Opitz, H. Ito, T. Wallow, D. Hofer

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Keywords: poly(norbornenes), oxide-etch resistance, 193nm exposures, positive resist

JOURNAL FREE ACCESS

1999 Volume 12 Issue 3 Pages 493-500

DOI https://doi.org/10.2494/photopolymer.12.493

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Abstract

Using substituted poly(norbornenes), we have developed an etch-resistant, high resolution single layer 193nm positive resist. This paper describes the optical absorption properties, oxide-etch characteristics and resolution capabilities of such a first generation IBM resist.

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