Abstract
In previous papers we have reported on the lithographic and etch performance of IBM's internally developed 193nm single layer photoresist system which is based on functionalized poly(norbornenes). These polymers are unique in that they offer potentially superior etch resistance when compared to other polymer systems being investigated for 193nm lithography, and in addition, have the requisite transparency which could lead to superior imaging performance as well. However, this class of polymers is unusual in that the dissolution properties are very different when compared to 248nm or other 193nm polymer platforms as has been previously reported by Ito. This paper will focus on the design, properties and lithographic performance of functionalized norbornene polymers we used for 193nm resist materials development.
