抄録
A glass precursor polymer is designed on the basis of an idea of conversion of organosilicone polymer to an inorganic substance by lithographic procedure. Poly(di-t-butoxysiloxane) with photoacid generator is exposed followed by baking to give SiO2. The mechanism of the conversion is confirmed from the IR spectra. The sensitivity changes by deprotection ratio of t-butyl groups in the polymer chain, structurally improved polymer gives high sensitivity of 1.65μC/cm2. The glass precursor resist resolves 0.2μ m L/S patterns. O2-RIE durability of the resist film after exposure and PEB is, extremly high, over 62 times compared with bottom resist.
