抄録
A chemically amplified, positive-working resist system based on silylated Polyhydroxystyrene has shown its potential ability for application to the quarter micron lithography. The present paper describes the recent improvement on resist performance achieved through studies on effects of polymer characteristics and process conditions. Especially reported is the methods for avoiding the T-shaped pattern profile which is often observed for many chemically amplified, positive- working resist systems.
Although the development is still on the way, the silylated polyhydroxystyrene resist shows excellent properties on resolution capability, sensitivity and process latitude.
