抄録
A new positive-tone ArF single layer resist based on chemical amplification is described. High transparency at 193nm and dry-etch resistance required for ArF single layer resist can be achieved by introducing compounds containing alicyclic groups, such as adamantyl derivatives, in the resins. The dry-etch resistance of the resist is comparable to that of novolac resists, and high transparency ensures pattern imaging at 193nm. This resist is capable of resolving 0.2μm features with an ArF exposure system, and is suitable for ArF single layer resist.
