SUB 0.25MICRON RESOLUTION AND PROFILE CONTROL IN PHOTORESISTS UNDER E-BEAM EXPOSURE

Abstract

A new method of undercut structure profile formation in positive photoresists based on low energy electron irradiation has been developed. This method has advantages such as separate control of the modified resist layer thickness and the value of the sensitivity reduction. Microbridges with the width of o.25 micrometer have been formed across the grooves in photoresist by 4KeV electron beam exposure. A new technology of lift-off process with positive tone photoresist irradiation with low energy electrons has been proposed.