Dependence of rf Power to the Microstructure of ZnO Thin films Fabricated by Using Atmospheric Pressure Cold Plasma

Abstract

Under atmospheric pressure, homogeneous non-equilibrium cold plasma was generated stably by rf (13.56 MHz) excitation of a mixture of He and O2 gases. By feeding Zn-MOPD (C18H30O6Zn) into this plasma with He carrier gas, transparent flat ZnO thin films were successfully fabricated on glass substrates. Dependence of rf power to the structure of ZnO films was investigated. In addition, microstructure of the films was studied by XRD and AFM measurements.