Effect of Temperature on Sapphire C plane CMP by Colloidal Silica Slurry

Abstract

CMP technology has been widely used for sapphire final polishing. In this study, we investigated the effect of temperature on polishing properties of sapphire. Among the temperature range studied in this study, the surface roughness was almost the same irrespective temperature, whereas, the removal rate was revealed to increase with increasing temperature. These results suggest that the chemical reactivity would be more activated at higher temperature during sapphire CMP.