A model (algorithm) for the interfacial contacting process in the solid state diffusion bonding has been developed to establish the support system for prediction of the solid state diffusion bonding. By taking into account the change in the void spacing during bonding, the model was updated from the existing model which Takahashi et al. had proposed.
The method (overlap process) for estimating the void spacing on the bond-interface is firstly proposed. Four fundamental bonding mechanisms are introduced in order to update the bonding model. The calculated results are compared with experimental ones and they agree well. The present model predicts the latter stage of bonding (the percentage bonded area greater than 50%) which largely depends on the void spacing, although the time required to complete the full contact has not been exactly estimated.
