溶接学会論文集
Print ISSN : 0288-4771
Arアトム照射を用いた接合によるマイクロプロセッサの欠陥救済方法
佐々木 康彦河野 顕臣堀野 正也宇佐美 光雄徳田 正秀田勢 隆
著者情報
ジャーナル フリー

1998 年 16 巻 2 号 p. 264-271

詳細
抄録

This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI film is bonded to a substrate. The irradiation does not cause electrical damage to the device. Although the clean surfaces are quickly re-contaminated after the irradiation, the LSI can be bonded at low temperature and under light pressure. The joints have a few voids at the interface, but the mechanical and their thermal properties are good enough for electronic devices. This new joining technology offers the possibility of developing a defect rescue method for active device transfer.

著者関連情報
© 一般社団法人 溶接学会
前の記事 次の記事
feedback
Top