This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI film is bonded to a substrate. The irradiation does not cause electrical damage to the device. Although the clean surfaces are quickly re-contaminated after the irradiation, the LSI can be bonded at low temperature and under light pressure. The joints have a few voids at the interface, but the mechanical and their thermal properties are good enough for electronic devices. This new joining technology offers the possibility of developing a defect rescue method for active device transfer.
