2001 年 19 巻 4 号 p. 649-655
Rapid fusion and evaporation phenomena of silicon with ultrashort-pulse laser irradiation were simulated by a threedimensional molecular dynamics model. Evaporation process was elucidated, and both propagation velocity of shock wave and scattering velocity of evaporated atoms were analyzed quantitatively. Crystal orientation dependence of laser shock phenomena and fusion process was also examined with the models of Si (100) and Si (111) surfaces. Laser absorption in the material, that is, absorption coefficient is dominant in fusion process with subpicosecond pulse laser irradiation.