1989 年 7 巻 4 号 p. 524-531
Bonding of Si3N4 to W using Cu-5%Cr, Cu-1%Nb, Cu-3%V, Cu-5%Ti and Cu-10%Zr insert metals was conducted in a vacuum furnace. The reaction layer existed at the interface between Si3N4 and insert layers in Si3N4-W joints. Cr, Nb, V, Ti or Zr was concentrated in the region adjacent to Si3N4, and Cu was enriched in the center region of insert layer for all insert metals used. From the results of X-ray diffraction analysis, it was found that Cr2N, CrN and CrSi2, NbN and Nb3Si, VN and V6Si5, TiN and Ti5Si3, ZrN and Zr5Si3 existed in thee reaction layer. The thermodynamics calculation suggested that these nitrides and silicides could be formed by the reaction between Si3N4 and Cr, Nb, V, Ti or Zr containing in the melted insert metal in the first stage of reaction layer formation.