1991 Volume 9 Issue 4 Pages 544-549
The valence electronic structure of the Ti/SiO2 interface was discussed by analyzing their Auger spectra. The change in the intensity ratio of SiO2-L23V1D+Si-L3M23M23/SiO2-L23V1V1 with Ti contents were helpfull to confirm the interfacial Ti-Si bonds under the condition that the electronic dose were kept constant at each analyze-point through the interface. This concept was also applied to annealed interface of Cr/SiO2 and Cu/SiO2. M-O or Si-O bonds were detected at the interface. The possibility of the existence of M-Si bonds were suggested from the Auger intensity ratio. The transition elements which exhibit small number of 3d electron, such as III a-VI a metals, tend to lose the metallic property in electronic structure.
