対向型陽電子消滅γ線ドップラー拡がり測定装置の製作

抄録

The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski- (Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained.