B（C₂H₅）₃を用いて合成したB添加導電性DLC膜の機械的特性評価

抄録

Because of its superior tribology and hardness properties, DLC film is applied to cutting tools and mechanical sliding components. However, when the film is applied to a Parts carrier system for semiconductors, wear resistance of the film is necessary to maintain the positioning accuracy and to avoid yielding of wear-dust. Furthermore, electrical conductivity of the film is necessary to eliminate the dust adsorption that results from electrification by static electricity, which occurs because of the friction between Parts and the carrier system. Although nitrogen or boron doping is known to be effective to raise the film conductivity, the effect of boron on mechanical characteristics has not been elucidated yet. This study examines electrical and mechanical properties of boron-doped DLC film synthesized using RF plasma CVD method. Results show that boron doping of more than 1% decreases the film electrical resistance from 10¹⁰ Ωcm to 10² Ωcm, whereas the increase of the element decreases hardness. A ball on disc wear test of the film revealed that the friction coefficient is around 0.2, irrespective of boron content, at 373.15 K.