1989 年 40 巻 6 号 p. 758-761
A study was conducted on the outgassing behavior from Ti thin films deposited by ion plating and on H2 adsorption on the clean or partially oxidized Ti film surface using thermal desorption spectroscopy (TDS). Desorption from the initial surface were mainly H2 molecules, which were considered to be generated by the thermal decomposition of titanium hydride compounds on the surface. Relatively small amounts of H2O, CO, and CO2 desorption were also detected.
On the cleaned Ti film surface, adsorption of residual H2 gas from the vacuum vessel was observed. Analysis of TDS spectra showed that the reaction order of desorption is second order and the activation energy of desorption was estimated to be 1.52eV. The amount of H2 adsorption decreased as the O2 dose increased, which indicating that gettering of H2 occured only on the Ti metal surface and not on the oxide.