1990 年 41 巻 1 号 p. 40-44
SiC films were deposited by magnetron sputtering using Ar sputtering gases having various volume fractions of N2 gas. The chemical composition, quality and electric properties of the deposited films were investigated with the following results.
The hardness of the deposited films decreased linearly with the increase in the amount of N2 gas added, reaching a constant value of HK 1300 at a volume fractions of N2 to Ar of 30∼40%.
Deposited films also became celluler in structure with increases in the amount of N2 gas.
In SiC films deposited using Ar gas only, silicon and carbon content was 55 and 45 mol. percent respectively. These values decreased with increases in the amount of N2 gas, and the nitrogen content of the films increased.
At an N2/Ar gas volume fraction of 30%, the silicon, carbon and nitrogen in the films reached the constant values of 30, 20 and 50 mol. percent respectively. X-ray diffraction indicated that all the deposited films were amorphous, and EPMA and infrared analysis suggested that the elemental nitrogen in the films formed Si-N bonds.
Electrical measurements made it clear that the SiC films had the NTC property and that the resistivity and the B constant of the films increased with increasing N2 gas.