電流遮断法を応用したエチレングリコール中の水素化アモルファスシリコン陽極酸化の解析
1992 年 43 巻 4 号 p. 335-339
詳細
1992 年 43 巻 4 号 p. 335-339
The anodic oxidation process of a-Si: H is a basic feature of integrated circuit technology. In the thermal oxidation method, the hydrogen will separate from the a-Si-to-H bond at a high temperature, so that anodic oxidation is well suited to the growth of film on amorphous silicon by plasma-chemical vapor deposition. Nevertheless, the electrolytic anodization process of a-Si: H film has not yet been investigated.
A current interrupter technique was used to measure the resistance polarization, the differential capacity of the electric double layer, and the activation energy in the anodic oxidation of a-Si: H, and it has also been applied to the analysis of anodic oxidation in a variety of metals.
The apparatus used was built using a mercury-wetted electromagnetic relay combined with an integrated circuit. The circuit based on this design made contact with an anodic electrode of a-Si: H and a cathodic electrode of platinum in ethyleneglycol solution. The characteristics of anocic behavior in SiO2 on a-Si were checked through the use of this system.
The output waveforms of the transient phenomena were traced on a digital memory scope, and the data was sent to a computer over a GP-IB interface.
In general, the differential capacity increases as the temperature rises at 2.5∼10mA cm-2. The Arrenius plots fully satisfied the linear relationship, and the calculated value of activation energy was about 14.5kJ mol-1.
