1993 年 44 巻 12 号 p. 1104-1107
A new bromine-free solution consisting of colloidal silica, citric acid and hydrogen peroxide has been developed for the mirror-polishing of InP and InSb wafers. This paper describes the effects of the polishing pressure and pH value of the solution on surface quality. Use of the optimized solution reduced the surface roughness of the polished wafers to 15Å for InP and 30Å for InSb. There was no damage to the polished surfaces under the optimum conditions.