ArプラズマによるダイヤモンドのプラズマCVD
1994 年 45 巻 11 号 p. 1126-1129
詳細
1994 年 45 巻 11 号 p. 1126-1129
Up to now, an extremely high density of atomic hydrogen was supposed to be necessary for the gas phase growth of diamond, so that hydrogen was usually used as the plasma base gas. Therefore, we have investigated the chemical vapor deposition of diamond in Ar/H2-CH4-O2 plasma, especially the effect of the plasma gases (Ar or H2). Only diamond phase could be successfully grown even in the Ar-based plasma, revealing that the sufficient amount of hydrogen atoms was supplied by the cracking of methane molecules in the plasma. The comparison of the deposits in Ar-based and H2-based plasmas showed that both the morphology and the growth rate were similarly dependent on substrate temperature. Although the gas-phase composition in Ar-based plasma might be different from that in H2-based plasma, the composition in the vicinity of growth interface would be virtually identical in both cases.
