1994 年 45 巻 12 号 p. 1270-1275
Silicon oxide films were prepared on polyethylene terephthalate film by radio-frequency plasma chemical vapor deposition using hexamethyl disiloxane (HMDSO) and oxygen gas and intentionally not heating the substrate.
We studied the influence of the surface conditions of the substrate on gas permeability of films. We also studied the compositional and structual properties of films through infrared absorption, refractive indexing, and X-ray photo-electron spectroscopy (XPS).
Silicon oxide films prepared by using HMDSO and oxygen gas plasma featured high gas-barrier properties, which were affected by the surface conditions of the substrate. We confirmed that it was necessary to bombard the substrate using HMDSO plasma as a pretreatment in order to obtain a silicon oxide film with higher gasbarrier properties.