無電解めっきによるインジウム-アンチモン合金薄膜の形成
1994 年 45 巻 9 号 p. 923-928
詳細
1994 年 45 巻 9 号 p. 923-928
The elctroless plating of In-Sb alloy films on an alumina substrate was achieved with a bath using titanium trichloride as the reducing agent. The stoichiometric ratio of indium and antimony in deposits depended mainly on the concentration ratio of the antimony trichloride to the indium trichloride in the bath and on plating conditions, especially the pH.
Stoichiometric In-Sb films were produced from a solution containing 0.08M indium trichloride, 0.0002M antimony trichloride, 0.34M trisodium citrate, 0.14M trisodium nitrilotriacetate, 0.04M titanium trichloride, and sodium carbonate for pH control, under the conditions of pH 8.6, 7.8, and 7.2, corresponding to bath temperatures of 50°C, 60°C and 70°C. The resulting deposits were polycrystalline films of InSb (111), (220), and (311), which had Hall mobilities of 2.5∼4.2×103cm2/V·s, which are nearly identical to those of InSb films which have been vacuumdeposited on an alumina substrate.
