ろう接による窒化ケイ素セラミックス/活性金属Tiの接合界面の変化挙動
1995 年 46 巻 3 号 p. 260-264
詳細
1995 年 46 巻 3 号 p. 260-264
A study on Si3N4-Ti interface behavior and the effect of the Ti reactive layers on the strength of the bond between the Si3N4 ceramic and the metal in active metal brazing was conduced by means of EPMA, SEM, XRD and tensile tests. The results show that the interface reactive layers of Si3N4-Ti consisted of TiN and Ti5Si3. When the Ti foil was thick and the temperature was high, a reactive layer of coarse grain of Ti5Si3 was formed and bond strength decreased.
