1996 年 47 巻 9 号 p. 779-783
High-resistivity NiP films were prepared by electroless deposition while varying the complexing agent species. When complexing agents having -NH2 and=NH groups, e. g., amino acids or amines are used for the NiP bath, higher resistivity NiP films are obtained with electroless deposition. Complexing agents of β-alanine, diethylenetriamine, and sodium L-glutamate were most suitable making higher resistivity NiP films. The highest resistivity was obtained from a diethylenetriamine bath. The resistivity of NiP as-deposited film from a diethylenetriamine bath is 5, 400μΩcm, compared to 160μΩcm for usual NiP films. The most suitable NiP film from the diethylenetriamine bath shows resistivity stable against annealing at about 400°C. High specific resistivity films were found to contain a small amount of carbon. The NiP film from the diethylenetriamine bath contained ca. 3at% carbon, and exhibited a grain structure even at the amorphous state.