1998 年 49 巻 6 号 p. 625-631
Acceleration was investigated using high-resolution TEM to clarify the direct copper plating mechanism on nonconductive substrates catalyzed by treating in a Pd-Sn solution and accelerating in a solution containing copper ion. After catalyzation, catalyst colloids adsorbed on the resin substrate were about 2nm, had low crystallinity, and consisted of 20nm clusters. The composition ratio of Pd:Sn in catalysts was 4:6. After acceleration by dipping in an alkaline solution including copper ions, the Pd:Sn:Cu ratio became 6:1:3 through tin dissolution and copper deposition. Catalyst colloid particle size showed no substantial change after acceleration, but an fcc Pd-Sn solid-solution having improved crystallinity was identified. Dispersed copper crystals occurred in acceleration on the catalyst layer. The catalyst layer on the acetylcellroce substrate surface was 40nm and on the ABS substrate was 15nm. Cross-sectional observation showed that the deeply etched ABS surface was filled with copper deposit anchoring the plated layer. Copper deposition propagation was about 3mm/s in the presence of Cu(II) and 0.1mm/s in its absence. The catalyst layer increases surface conductivity and dispersed copper crystals are assumed to speed up direct copper plating.