抄録
A new boundary element method has been developed to simulate the electroplating of a silicon wafer with copper. In this method, the Laplace equation is solved with three-dimensional or axisymmetric elements by representing the complicated phenomena near the anode and cathode surfaces as polarization characteristics (PCs) and using the PCs as nonlinear boundary conditions. Prior to electroplating, sputtering is used to coat a silicon wafer with a Tantalum nitride (TaN) film. The electrical resistance of thin copper and TaN films on a silicon wafer is then taken into account. To make a uniform copper film, the anode (copper plate) is divided into several pieces, and optimization of the current supplied to each piece of the anode is performed through use of the Simplex method.
