表面技術
Online ISSN : 1884-3409
Print ISSN : 0915-1869
アークイオンプレーティング法により作製した窒化ケイ素薄膜の特性
石川 宏美筆谷 秀一広橋 光治
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2000 年 51 巻 7 号 p. 740-744

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Adhesion of thin SiNx to a stainless steel SUS 310 substrate was done through use of an arc ion plating process. Film properties were investigated with structural analysis and adhesion to determine conditions for film deposition. For this process, the voltage of the substrate bias was -200V to -600V, the gas pressure in the plating chamber was 1.3×10-2∼6.7×10-2Pa, and gas formation was examined comparatively for 100% N2 and 50% N2/50% He. The substrate temperature remained constant at 580°C and electrode voltage was 50V.
These films were evaluated in terms of critical load value (Lc) measured by a micro-scratch machine, X-ray diffraction patterns, and results of state analysis using an electron probe microanalizer (EPMA) and electron spectroscopy for chemical analysis (ESCA). The following conclusions were obtained. 1) A lower bias voltage is satisfactory, though an increase in the critical load leads to favorable adhesion. 2) A mixture of N2 and He in the chamber results in superior Lc for the deposited film. 3) The films have an amorphous mixture of Si3N4 and Si.

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