抄録
Strongly c-axis oriented Pb (ZrxTi1-x) O3 thin films were successfully grown on (100) Pt/(100) MgO substrate using the metalorganic chemical vapor deposition (MOCVD) method. The electrical properties of PZT thin films with thickness of 2μm are almost the same values of PZT single crystal. But they sharply change below film thickness of 0.5μm: dielectric constant and remanent polarization decrease, and coercive field increases. These phenomena are explained by the model that low dielectric constant layer exist in series with normal PZT layer. The origins of this layer is considered to be the intrinsic stress produced by the coalescence of crystal grains.
