2006 年 47 巻 540 号 p. 37-43
Initially, it was easy to spread Si and diamond mutually, and we assumed that a diffusion layer was formed due to a reaction of diffusion bonding and selected Si. We formed a diffusion couple after pressurization by the cold isostatic pressure (CIP) method using plates of Si and C (artificial graphite) to estimate a suitable temperature in the diffusion joining of Si with diamond, joining time, the what of SiC generated and by the reaction between the solids for which we used the hot isostatic pressure (HIP) method We analyzed the generation layer and reactivity, and determined the diffusion coefficient necessary to measure the generation speed of Si/C joining. We produced Si/diamond with a diffusion couple after having processed pressurization by the CIP method of powders of Si and diamond or plates of Si and diamond after determining a conditions. We spread, and joined the materials by the HIP method and evaluated diffusion mechanism and joining strength. As a result of analysis after HIP processing, SiC was generated from Si and a contact interface with diamond. Results of the measuring bonding strength using a tensile test showed that the tensile strength was 118.5 MPa under HIP processing of a temperature of 773 K and a holding time of 36.0 ks, while tensile strength was 170.7 MPa under HIP processing of 973 K and holding time of 36.0 ks.