Tetsu-to-Hagane
Online ISSN : 1883-2954
Print ISSN : 0021-1575
ISSN-L : 0021-1575
Secondary Recrystallization Behavior during the “Strain-Anneal” of 3% Silicon-Iron Sheet
Koh MATSUMURAAkio KAMADA
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1972 Volume 58 Issue 3 Pages 452-463

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Abstract

The growth conditions of seed crystals in the sheet material of 3% silicon-iron cold-rolled 70%(1st-stage rolling) and annealed at 800° for 30 min were examined, and the grain growth behavior during the strain-anneal procedure was observed together with the texture change.
The prestrain of a wide range of 20-60% by cold rolling in the 1st-stage rolling direction or the transverse direction was found to be sufficient to induce the growth of seed crystals. At higher prestrains, seed crystals of (110)[001] orientation aligned to the direction of prestrain appeared. At lower cold reductions, prestrain in any direction gave the seed crystals of (110)[001] orientation aligned to the 1 st-stage rolling direction. The primary recrystallization after the prestrain was accomplished by the nucleation and growth in the former case and by the migration of original grain boundaries in the latter. The transition between them was found to occur around the prestrain of 30% cold reduction, where the seed crystals of both orientations were found. These seed crystals grew selectively during the secondary recrystallization and the difference in the rolling or primary recrystallization texture obtained after various prestrains had no effects on the selective growth of seed crystals.

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© The Iron and Steel Institute of Japan
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