常圧焼結を用いたSbドープ多孔質Mg₂(Si,Sn)の製造方法と熱電特性

抄録

For thermoelectric power generation using waste heat, thermoelectric materials with a high figure of merit (zT) below 473 K are suitable. Mg₂(Si,Sn) is a potential option; however, since it shows high performance around 700 K, it is desirable to achieve a higher zT at lower temperatures. In this study, Mg₂ (Si,Sn) was developed to achieve a higher zT at lower temperatures through porous treatment. For the widespread use of thermoelectric conversion technology, a scalable manufacturing method for thermoelectric materials is needed. Our group developed manufacturing methods for “Sb-doped porous Mg₂(Si,Sn)” using pressure-less sintering, which is relatively inexpensive and improves productivity compared to hot pressing or spark plasma sintering. The maximum zT of “Sb-doped porous Mg2(Si,Sn)” obtained by the developed manufacturing method is 0.95 at 423 K.