The Hall effect measurement in the high resistance In₂O₃-ZnO polycrystalline films

抄録

Sputtering In₂O₃-ZnO on the glass substrate by the DC magnetron method and annealing, granular films were obtained. Controlling the carrier density by the frequency and the power of the light, the carrier density and the mobility were measured by the Hall effect for the high resistance films (180kΩ - 32GΩ). For the samples with the ZnO concentrations 0, 0.5% and 1% (wt), the mobility increases with the carrier density. For the samples ZnO 2% and 3%, the variation of the mobility is relatively small.