ZnO thin film prepared by a microwave heating technique
2010 年 35 巻 1 号 p. 7-9
詳細
2010 年 35 巻 1 号 p. 7-9
We investigated a microwave heating technique to prepare transparent conducting ZnO thin films in air within a few minutes. A microwave was directly irradiated to a glass substrate by a commercial kitchen microwave oven with an output power of 2.45GHz and 1000 W. The substrate temperature went up as high as 550°C in a few tens seconds with increasing the thickness of a microwave absorbing layer attached on the back of the substrate. The electrical resistivity of ZnO film reached the minimum value of 4.1×10-3 Ω・cm by optimizing a dopant indium concentration.
