Magnesium silicide film on a silicon substrate prepared by electrochemical method in LiCl-KCl

抄録

The method as described below enables us to synthesize a continuous film of Mg₂Si with the thickness up to 10 μm. By conducting potentiostatic electrolysis of a silicon cathode in a molten LiCl-KCl-MgCl₂ melt, electrochemical formation of magnesium silicide proceeded according to the following reaction steps; Mg(II) + 2e^- → Mg (Reduction of Mg(II) on a Si cathode), 2Mg + Si → Mg₂Si (Formation of silicide film). From XRD and SEM results, a polycrystalline Mg₂Si with a thickness of 20 μm was uniformly formed on Si (001) surface, after conducting potentiostaic electrolysis at 0.8 V (vs. Li⁺/Li). Absorption edge of the sample was exhibited at around 0.8 eV through transformation of reflectance spectra with Kubelka-Munk function.