Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Regular Papers
Growth and piezoresistive properties of Al doped ZnO nanorods synthesized by hydrothermal method
H. TakeuchiH. ItoY. KabeyaS. HiramatsuY. Ichikawa
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キーワード: ZnO, nano, thinfilm, sensor, piezoresistance
ジャーナル フリー

2011 年 36 巻 2 号 p. 187-189

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  In this study, Al doped ZnO(Al:ZnO) nanorods were synthesized on the conductive ITO glass substrate using hydrothermal method, and its piezoresistive properties were measured. Electrical impedance of the Al:ZnO nanorods have decreased compared to the undoped nanorods. However, the shape of the nanorod became more slender and inclined to the substrate if more than 1% aluminum ion was mixed to the reactive solution. Piezoresistive change ratio of the Al:ZnO nanorods was almost the same with undoped sample, which agrees with the results of Ga doped ZnO nanorods in our previous study.

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© 2011 The Materials Research Society of Japan
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