Strain Field Around Lomer Sessile Dislocations in Silicon Measured using Geometric Phase Analysis

抄録

  Strain fields around dislocation pairs were measured using geometrical phase analysis of high-resolution TEM images. Single crystalline (011) silicon wafers were employed. The wafers were deformed using three-point bending at 1123K in order to introduce dislocations. The observed dislocations were found to be Lomer sessile dislocations. The strain fields around the dislocations experimentally measured were in good agreement with those calculated from the elastic theory. Experimental results showed that the strain field of two dislocations can be regarded as a single dislocation when their distance is less than 6b.