DC Biasing Effects on Properties of Carbon Nanowalls by Microwave Surface-Wave Plasma Chemical Vapor Deposition and Towards Transparent Electrode

抄録

We synthesized carbon nanowalls on a Si substrate by microwave surface-wave plasma chemical vapor deposition. The Raman scattering I_D/I_G ratio was changed by altering the DC bias applied to the growth substrate and the decrease in I_D/I_G with increasing DC bias appears to arise from the growing length of the carbon nanowalls. The ultrasonically separated carbon nanowalls in ethanol exhibited strong 2D-peak intensity and significant graphitization. A graphite layer of approximately 10 nm grew parallel to the substrate initially, and the carbon nanowalls grew on top of that. When the nanowalls were dispersed in ethanol and spin-coated onto PET, they exhibited a transmittance of 81% and a sheet resistance of 52 kΩ/□ without reduction treatment used in the graphene oxide.