IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524

This article has now been updated. Please use the final version.

Operating Characteristics of Gamma Irradiated Si BJT
Sung Ho Ahn, Gwang Min Sun, Hani Baek, Byung-Gun Park
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Keywords: Gamma irradiation, BJT, Ionization, Displacement damage
JOURNAL RESTRICTED ACCESS Advance online publication

Article ID: 2021FUS0001

The final version of this article is now available: Vol. E105.C (2022), No. 10 pp. 631-634
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Abstract

When BJTs are irradiated by gamma rays, interface trapped charges and positive oxide trapped charges are formed by ionization at the Si-SiO2 interface and SiO2 regions, respectively. These trapped charges affect the movement of carriers depending on the type of BJT. This paper presents experimental results regarding operating characteristics of gamma irradiated pnp Si BJTs.

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