IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Online ISSN : 1745-1337
Print ISSN : 0916-8508
Special Section on VLSI Design and CAD Algorithms
Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads
Chihiro MATSUIKen TAKEUCHI
著者情報
ジャーナル フリー

2023 年 E106.A 巻 3 号 p. 491-503

詳細
抄録

This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.

著者関連情報
© 2023 The Institute of Electronics, Information and Communication Engineers
前の記事 次の記事
feedback
Top