ショットキバリア型赤外線CCDイメージセンサ
1991 年 15 巻 51 号 p. 13-18
詳細
1991 年 15 巻 51 号 p. 13-18
Schottky barrier infrared CCD image sensor is reviewed. Photo-electron conversion mechanism, its characteristics, and various response improvement methods are explained. Then, newly developed 648x487 pixel Schottky barrier infrared CCD image sensor is shown. It achieves a 40% fill factor of 21x21um size pixel by minimizing vertical CCD region and dead region. Noise equivalent temperature difference (NETD) is 0.1K.
