We examined the switching characteristics of amorphous silicon thin-film transistors by a large area ion doping technique without mass-separation. The off-current of the ion-doped TFTs was reduced by increasing the acceleration voltages of the ion doping. Under illumination, the photo-current of the ion-doped TFTs was 1〜2-figures lower than that of the conventional P-CVD deposition-doped TFTs. We believe that the ion-doped TFTs can be well applied to the switching elements of liquid crystal displays.
