Reduction of pixel size of poly-Si TFT active matrix LCDs is discussed. To have hitgh aperture ratio, the area of storage capacitor is reduced by making dielectric film of storage capacitor thinner than that of TFT. LDD structure TFT is used for pixel TFTs to reduce off current. Using these techniques, test panels with 37μmx 32μm pixel pitch are fabricated. Drivers are fully integrated simultaneously on the substrate. Aperture ratio of 32%, and contrast ratio more than 50 : 1 are obtained.
