Low Temperature Poly-Si TFT by Lamp Annealing

抄録

We studied the crystallization of a-Si by lamp annealing and the application of these poly-Si to the fabrication of TFTs. We found that the crystalline volume fraction and the grain size are larger for the poly-Si made using CVD a-Si compared with that using conventional PECVD a-Si from the X-ray and UV reflectance measurements. The surface crystalline volume fraction of poly-Si film by lamp annealing is over 80%. Using this poly-Si layer, we have made staggered type TFT on glass plate with field effect mobility of about 8 cm^2/Vs and the threshold voltage of less than 5V.